D65010 データシート PDFこの部品の機能は「Upd65010」です。 |
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部品番号 |
D65010 UPD65010 www.Datasheet.jp DataSheet 4 U .com www.Datasheet.jp DataSheet 4 U .com www.Datasheet.jp DataSheet 4 U .com www.Datasheet.jp DataSheet 4 U .com www.Datasheet.jp DataSheet 4 U . NEC |
文字列「 D65010 」「 65010 」で始まる検索結果です。 |
部品説明 |
5SNA0400J650100 IGBT Module VCE = IC = 6500 V 400 A ABB HiPakTM IGBT Module 5SNA 0400J650100 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability • AlN substrate for low thermal resistance Do ABB |
5SNA0600G650100 IGBT Module VCE = IC = 6500 V 600 A ABB HiPakTM IGBT Module 5SNA 0600G650100 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability • AlN substrate for low thermal resistance Do ABB |
IDT79R4650100MS EMBEDDED 64-BIT ORION RISC MICROPROCESSOR EMBEDDED 64-BIT ORION™ RISC MICROPROCESSOR Integrated Device Technology, Inc. IDT79R4650™ IDT79RV4650™ FEATURES • High-performance embedded 64-bit microprocessor - 64-bit integer operations - 64-bit registers - 80MHz, 100MHz, 133MHz operation frequency • High-performa Integrated Device |
IDT79RV4650100MS EMBEDDED 64-BIT ORION RISC MICROPROCESSOR EMBEDDED 64-BIT ORION™ RISC MICROPROCESSOR Integrated Device Technology, Inc. IDT79R4650™ IDT79RV4650™ FEATURES • High-performance embedded 64-bit microprocessor - 64-bit integer operations - 64-bit registers - 80MHz, 100MHz, 133MHz operation frequency • High-performa Integrated Device |
NE650103M NECS 10 W L & S-BAND POWER GaAs MESFET NEC'S 10 W L & S-BAND NE650103M POWER GaAs MESFET FEATURES • LOW COST PLASTIC PACKAGE • USABLE TO 2.7 GHz: PCS, W-CDMA, WLL, Satellite Uplink, BWA • HIGH OUTPUT POWER: 40 dBm TYP • HIGH POWER ADDED EFFICIENCY: 45 % TYP at 2.3 GHz • LOW THERMAL RESISTANCE: 4.0° C/W • ETC |
NE6501077 10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET PRELIMINARY DATA SHEET GaAs MES FET NE6501077 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6501077 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. To reduce thermal resistance, the device has a PHS (Plat NEC |
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