D525 データシート PDF 検索 |
| 番号 | 部品番号 | 部品説明 | メーカ | |
| 1 | D525 | 2SD525 2SD525 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER www.Datasheet.jp TO-220 Complement to 2SB595 ! ABSOLUTE MAXIMUM RATINGS (TA=25℃) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg |
 Wing Shing Electronic |
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D Datasheet ( データシート ) - 検索結果 |
| 部品番号 | 部品説明 | メーカ | |
| D-BY228G | Standard Si- Rectifier Didoes 62.5 ±0.5 Type 7.5 ±0.1 D-BY228G Version 2012-04-04 Ø 4.5 ±0.1 Ø 1.2 ±0.05 Dimensions - Maße [mm] D-BY228G Standard Si- Rectifier Didoes Standard Si- Gleichrichter Dioden Nominal Current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic c |
 Diotec |
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| D-BYW36 | Fast Silicon Rectifiers 62.5±0.5 Type 5.1-0.1 D-BYW36, D-BYW38 Version 2008-01-18 Ø 2.6-0.1 Ø 0.8±0.05 Dimensions - Maße [mm] D-BYW36, D-BYW38 Fast Silicon Rectifiers Schnelle Si-Gleichrichter Nominal Current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case |
Diotec |
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| D-BYW36 | FAST SILICON RECTIFIERS D-BYW36, D-BYW38 FAST SILICON RECTIFIERS • Plastic material has UL Classification 94V-0 • Plastic case, DO-41 DO-41 0.8± 0.05 2.6-00.1 5.1-00.1 62.5± 0.05 Dimensions in mm Absolute Maximum Ratings and Characteristics Parameter Symbols D-BYW36 D-BYW38 Units Repetitiv |
 SEMTECH |
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| D-BYW38 | FAST SILICON RECTIFIERS D-BYW36, D-BYW38 FAST SILICON RECTIFIERS • Plastic material has UL Classification 94V-0 • Plastic case, DO-41 DO-41 0.8± 0.05 2.6-00.1 5.1-00.1 62.5± 0.05 Dimensions in mm Absolute Maximum Ratings and Characteristics Parameter Symbols D-BYW36 D-BYW38 Units Repetitiv |
SEMTECH |
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| D10040220GT | GaAs Power Doubler Product Specification D10040220GT GaAs Power Doubler, 40 – 1000MHz, 22.5dB min. Gain @ 1GHz, 375mA max. @ 24VDC FEATURES • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise Un |
 PDI |
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| D1005 | 2SD1005 |
 Renesas |
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| D1005UK | Metal Gate RF Silicon FET TetraFET D1005UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D E 4 M 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN F G H K I J • SUITABLE FOR BROAD BAND APPLICATIONS • LOW |
 Semelab PLC |
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多くを見つけるデータシート
| 部品番号 | 部品説明 | メーカ | |
| ALC887 | The ALC887 is a 7.1 Channel High Definition Audio Codec with two independent SPDIF outputs. Featuring eight channels of DAC support 7.1 sound playback, and integrates two stereo ADC that can support a stereo microphone, and feature Acoustic Echo Cancellation (AEC), Beam Forming (BF), and Noise Suppression (NS) for voice applications. |
 Realtek |
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| BK3431 | The BK3431 chip is a highly integrated Bluetooth 4.0 low energy single mode device. It integrates a high-performance RF transceiver, baseband, ARM-core Micro processor, rich feature peripheral units, programmable protocol and profile
to support BLE application. The Flash program memory makes it suitable for customized applications.
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 Beken |
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| C1318 | This is a 2SC1318, Vcbo=60V, Silicon NPN epitaxial planer type Transistor, TO-92 Package. |
 Panasonic |
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| F1B2CCI | VRRM=200V, Stack Silicon Diffused Diode, TO-220IS Package. |
 KEC |
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| 20N60C2 | 650V, Cool MOS Power Transistor, SPP20N60C2, SPB20N60C2, SPA20N60C2. |
 Infineon |
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