JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2061 TRANSISTOR (NPN) TO-220F 1. BASE FEATURES z Low saturation voltage z Excellent DC current gain ch

Elektronische Bauelemente D20SB10 ~ D20SB100 100 V ~ 1000 V 20.0 Amp High Current Glass Passivated Molding Single-Phase Bridge Rectifier RoHS Compliant Product A suffix of “-C” specifies halogen-free and RoHS Compliant FEATURES  Plastic Package has Underwriters Laborat

D2082UK MECHANICAL DATA TetraFET 40W – 28V – 1.0GHz A K B (2 pls) E C 1 2 3 D 5 4 G (4 pls) F DIM A B C D E F G H I J K M N PIN 1 PIN 3 mm 6.45 1.65R 45° 16.51 6.47 18.41 1.52 4.82 24.76 1.52 0.81R 0.13 2.16 Tol. 0.13 0.13 5° 0.76 0.13 0.13 0.13 0.25 0.13 0.13 0.

TetraFET D2019UK METAL GATE RF SILICON FET MECHANICAL DATA A N 8 D 1 2 C B P 7 6 5 3 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 1GHz SINGLE ENDED FEATURES H K L J E F G M • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS

w headphone equipment 3V use). at .D DESCRIPTION w w Th e D2 00 2 is developed for play-b ack stereo dual OCL power a mplifier, and a ripple filter. STEREO aS HEADPHONE AMPLIFIER £¨ e e h U 4 t m o .c Silicore 3V USE£© Outline Drawing D2002 It is built in dual auto -r

D20N10E FEATURE 20 Amps, 95Volts N-CHANNEL Power MOSFET DFN5*6  20A,95V,RDS(ON)MAX=7mΩVGS=10V/5A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability APPLICATION  High Frequency Piont-of-Load Synchronous Buck Conve

SEMICONDUCTOR D2060D Series RRooHHSS Nell High Power Products Standard Recovery Diodes (Hockey PUK Version), 2060A FEATURES Wide current range High voltage ratings up to 4500V High surge current capabilities Diffused junction Hockey PUK version Case style DO-220AC(K-PUK), Nell