JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2061 TRANSISTOR (NPN) TO-220F 1. BASE FEATURES z Low saturation voltage z Excellent DC current gain ch

D2082UK MECHANICAL DATA TetraFET 40W – 28V – 1.0GHz A K B (2 pls) E C 1 2 3 D 5 4 G (4 pls) F DIM A B C D E F G H I J K M N PIN 1 PIN 3 mm 6.45 1.65R 45° 16.51 6.47 18.41 1.52 4.82 24.76 1.52 0.81R 0.13 2.16 Tol. 0.13 0.13 5° 0.76 0.13 0.13 0.13 0.25 0.13 0.13 0.

Elektronische Bauelemente D20SB10 ~ D20SB100 100 V ~ 1000 V 20.0 Amp High Current Glass Passivated Molding Single-Phase Bridge Rectifier RoHS Compliant Product A suffix of “-C” specifies halogen-free and RoHS Compliant FEATURES  Plastic Package has Underwriters Laborat

TetraFET D2019UK METAL GATE RF SILICON FET MECHANICAL DATA A N 8 D 1 2 C B P 7 6 5 3 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 1GHz SINGLE ENDED FEATURES H K L J E F G M • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS

w headphone equipment 3V use). at .D DESCRIPTION w w Th e D2 00 2 is developed for play-b ack stereo dual OCL power a mplifier, and a ripple filter. STEREO aS HEADPHONE AMPLIFIER £¨ e e h U 4 t m o .c Silicore 3V USE£© Outline Drawing D2002 It is built in dual auto -r

D20N10E FEATURE 20 Amps, 95Volts N-CHANNEL Power MOSFET DFN5*6  20A,95V,RDS(ON)MAX=7mΩVGS=10V/5A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability APPLICATION  High Frequency Piont-of-Load Synchronous Buck Conve

Elektronische Bauelemente D20SB10 ~ D20SB100 100 V ~ 1000 V 20.0 Amp High Current Glass Passivated Molding Single-Phase Bridge Rectifier RoHS Compliant Product A suffix of “-C” specifies halogen-free and RoHS Compliant FEATURES  Plastic Package has Underwriters Laborat