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Datasheet D1980 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | D1980 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1980
DESCRIPTION ·Darlington connection for high DC current gain ·Built in resistor between base and emitter ·Built in damper diode ·Complementary PNP types:2SB1316 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust dev |
 Inchange Semiconductor |
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| 1 | D1980 | NPN Transistor - 2SD1980 Power Transistor (100V, 2A)
2SD1980
Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1316.
inner circuit
C
B
R1 R2
E
R1 3.5kΩ R2 300Ω
B : Base C : Collector E : Emitter
Absolut |
 ROHM Semiconductor |
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