D1875 データシート PDF 検索

UNISONIC TECHNOLOGIES CO., LTD 2SD1857 POWER TRANSISTOR „ FEATURES NPN EPITAXIAL SILICON TRANSISTOR * High breakdown voltage.(BVCEO=120V) * Low collector output capacitance.(Typ.20pF at VCB=10V) *

SHANGHAI SUNRISE ELECTRONICS CO., LTD. D10SB10 THRU D10SB100 SINGLE PHASE GLASS PASSIVATED SIP BRIDGE RECTIFIER VOLTAGE: 100 TO 1000V CURRENT: 10A FEATURES • Glass passivated junction chip • Ideal for printed circuit board • Reliable low cost construction utilizing molded p

Ordering number:EN2264B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1268/2SD1904 High-Current Switching Applicatons Applications · Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features · Suitable for

Elektronische Bauelemente D15SB10 ~ D15SB100 100 ~ 1000 V 15.0 Amp High Current Glass Passivated Molding Single-Phase Bridge Rectifier RoHS Compliant Product A suffix of “-C” specifies halogen-free and RoHS Compliant FEATURES  Plastic Package has Underwriters Laboratory