Datasheet D1264 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	D1264	NPN Transistor, 2SD1264 Power Transistors 2SD1264, 2SD1264A Silicon NPN triple diffusion planar type For low-freauency power amplification For TV vertical deflection output Complementary to 2SB940 and 2SB940A Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54�	Panasonic Semiconductor	data
2	D1264	NPN Transistor, 2SD1264 DATA SHEET SILICON POWER TRANSISTOR 2SD2164 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2164 is a single power transistor developed especially for high hFE. This transistor is ideal for simplifying drive circuits and reducing power dissipatio	NEC	data

D12 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	D12000W	Standard Recovery Diode SEMICONDUCTOR RRooHHSS SEMICONDUCTOR Fig.1 Maximuam forward voltage drop characteristics D12000W Series RRooHHSS Fig.2 Surge forward current vs pulse length Fig.3 Forward power loss vs. Average forward current sine waveform Fig.4 Forward power loss vs. Average forward current,square waveform F	nELL	diode
2	D1201	METAL GATE RF SILICON FET TetraFET D1201UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN M I E K G • SUITABLE FOR BROAD BAND APPLICATIONS • LOW	Seme LAB	gate
3	D1201UK	METAL GATE RF SILICON FET TetraFET D1201UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN M I E K G • SUITABLE FOR BROAD BAND APPLICATIONS • LOW	Seme LAB	gate
4	D1202	METAL GATE RF SILICON FET TetraFET D1202UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN M I E K G • SUITABLE FOR BROAD BAND APPLICATIONS • LOW	Seme LAB	gate
5	D1202UK	METAL GATE RF SILICON FET TetraFET D1202UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN M I E K G • SUITABLE FOR BROAD BAND APPLICATIONS • LOW	Seme LAB	gate
6	D1203UK	METAL GATE RF SILICON FET TetraFET D1203UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D E 4 M 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 30W – 12.5V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN F G H K I J • SUITABLE FOR BROAD BAND APPLICATIONS DRAIN GATE DM PIN 1 PIN	Seme LAB	gate
7	D1204	METAL GATE RF SILICON FET TetraFET D1204UK METAL GATE RF SILICON FET MECHANICAL DATA C D (2 pls) E B 1 2 3 A G GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 30W – 12.5V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss 5 4 H I F M K J	Seme LAB	gate

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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