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Datasheet CY7C266 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | CY7C266 | 8Kx8 Power-Switched and Reprogrammable PROM 1CY7C266
CY7C266
8Kx8 Power-Switched and Reprogrammable PROM
Features
• CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns (Commercial) • Low power — 660 mW (Commercial) • Super low standby power — Less than 85 mW when deselected • EPROM technology |
Cypress Semiconductor |
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2 | CY7C2663KV18 | 144-Mbit QDR II+ SRAM Four-Word Burst Architecture CY7C2663KV18/CY7C2665KV18
144-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
144-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
Features
■ Separate independent read and write data ports ❐ Supports concurrent transactions
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Cypress Semiconductor |
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1 | CY7C2665KV18 | 144-Mbit QDR II+ SRAM Four-Word Burst Architecture CY7C2663KV18/CY7C2665KV18
144-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
144-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
Features
■ Separate independent read and write data ports ❐ Supports concurrent transactions
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Cypress Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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