Datasheet CY7C1265V18 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CY7C1265V18	1.8V Synchronous Pipelined SRAM CY7C1261V18, CY7C1276V18 CY7C1263V18, CY7C1265V18 36-Mbit QDR™-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) Features ■ Separate independent read and write data ports ❐ Supports concurrent transactions ■ 300 MHz to 400 MHz clock for high bandwidth ■ 4-Word Burst for reducing	Cypress Semiconductor

CY7C1265 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CY7C1265XV18	36-Mbit QDR II+ Xtreme SRAM Four-Word Burst Architecture CY7C1263XV18 CY7C1265XV18 36-Mbit QDR® II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) 36-Mbit QDR® II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) Features ■ Separate Independent Read and Write Data Ports ❐ Supports concurrent t	Cypress Semiconductor
CY7C1265V18	1.8V Synchronous Pipelined SRAM CY7C1261V18, CY7C1276V18 CY7C1263V18, CY7C1265V18 36-Mbit QDR™-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) Features ■ Separate independent read and write data ports ❐ Supports concurrent transactions ■ 300 MHz to 400 MHz clock for high bandwidth ■ 4-Wor	Cypress Semiconductor
CY7C1265KV18	36-Mbit QDR II+ SRAM Four-Word Burst Architecture CY7C1263KV18/CY7C1265KV18 36-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) 36-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) Features ■ Separate independent read and write data ports ❐ Supports concurrent transactions �	Cypress Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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