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Datasheet CY62167E Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | CY62167E | 16-Mbit (1M x 16 / 2M x 8) Static RAM CY62167E MoBL®
16-Mbit (1 M × 16 / 2 M × 8) Static RAM
16-Mbit (1 M × 16 / 2 M × 8) Static RAM
Features
■ Configurable as 1 M × 16 or as 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 4.5 V to 5.5 V ■ Ultra low standby power
❐ Typical standby current: 1.5 µA ❐ Maxim |
 Cypress Semiconductor |
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| 2 | CY62167EV18 | 16-Mbit (1M x 16) Static RAM CY62167EV18 MoBL®
16-Mbit (1M x 16) Static RAM
Features
■ ■ ■
Very high speed: 55 ns Wide voltage range: 1.65V – 2.25V Ultra low standby power ❐ Typical standby current: 1.5 µA ❐ Maximum standby current: 12 µA Ultra low active power ❐ Typical active current: 2.2 mA @ f = 1 MHz Eas |
Cypress Semiconductor |
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| 1 | CY62167EV30 | 16-Mbit (1M x 16 / 2M x 8) Static RAM CY62167EV30 MoBL®
16-Mbit (1M x 16 / 2M x 8) Static RAM
Features
• • • • TSOP I package configurable as 1M x 16 or as 2M x 8 SRAM Very high speed: 45 ns Wide voltage range: 2.20V–3.60V Ultra low standby power — Typical standby current: 1.5 µA
— Maximum standby c |
Cypress Semiconductor |
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