CY62148E データシート PDFこの部品の機能は「4-mbit (512 K X 8) StatIC Ram」です。 |
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部品番号 |
CY62148E 4-Mbit (512 K x 8) Static RAM CY62148E MoBL® 4-Mbit (512 K × 8) Static RAM 4-Mbit (512 K × 8) Static RAM Features ■ ■ ■ ■ Functional Description The CY62148E is a high performance CMOS static RAM organized as 512 K w Cypress Semiconductor |
文字列「 CY62148 」「 62148E 」で始まる検索結果です。 |
部品説明 |
CY62148 512K x 8 MoBL Static RAM 1CY 621 48 fax id: 1079 PRELIMINARY CY62148 512K x 8 Static RAM Features • 4.5V−5.5V operation • CMOS for optimum speed/power • Low active power — 660 mW (max.) • Low standby power (L version) — 2.75 mW (max.) • Automatic power-down when d Cypress Semiconductor |
CY62148DV30 4-Mbit (512 K x 8) MoBL Static RAM CY62148DV30 4-Mbit (512 K × 8) MoBL® Static RAM 4-Mbit (512 K × 8) MoBL® Static RAM Features ■ Temperature Ranges ❐ Industrial: –40 °C to 85 °C ■ Very high speed: 55 ns ❐ Wide voltage range: 2.20 V–3.60 V ■ Pin-compatible with CY62148CV25, CY62148CV30 and Cypress Semiconductor |
CY62148ESL 4-Mbit (512 K x 8) Static RAM CY62148ESL MoBL® 4-Mbit (512 K × 8) Static RAM 4-Mbit (512 K × 8) Static RAM Features ■ ■ ■ Functional Description The CY62148ESL is a high performance CMOS static RAM organized as 512 K words by 8-bits. This device features advanced circuit design to provide ultra lo Cypress Semiconductor |
CY62148G 4-Mbit (512K words x 8 bit) Static RAM CY62148G MoBL® 4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting Code (ECC) Features ■ High speed: 45 ns/55 ns ■ Ultra-low standby power ❐ Typical standby current: 3.5 μA ❐ Maximum sta Cypress Semiconductor |
CY62148GN 4-Mbit (512K x 8) Static RAM CY62148GN MoBL® 4-Mbit (512K × 8) Static RAM 4-Mbit (512K × 8) Static RAM Features ■ Very high speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V, 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 3.5 µA ❐ Maximum standby current: 8.7 µA ■ Easy Cypress |
CY62148V 512K x 8 MoBL Static RAM MoBL CY62148V MoBL™ 512K x 8 MoBL Static RAM Features • Low voltage range: — 2.7V–3.6V • Ultra low active power • Low standby power • TTL-compatible inputs and outputs • Automatic power-down when deselected • CMOS for optimum speed/power The device can be put Cypress Semiconductor |
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