Datasheet CY62147GE Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CY62147GE	4-Mbit (256K words x 16 bit) Static RAM PRELIMINARY CY62147G, CY621472G CY62147GE MoBL® 4-Mbit (256K words × 16 bit) Static RAM with Error-Correcting Code (ECC) 16-Mbit (1 M words × 16 bit / 2 M words × 8 bit) Static RAM with Error-Correcting Code (ECC) Features ■ High speed: 45 ns/55 ns ■ Ultra-low standby power ❐ Typical st	Cypress Semiconductor

CY6214 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CY62146VLL-70ZI	4M (256K x 16) Static RAM CY62146V MoBL® 4M (256K x 16) Static RAM Features • • • • • • • Wide voltage range: 2.7V–3.6V Ultra-low active, standby power Easy memory expansion with CE and OE features TTL-compatible inputs and outputs Automatic power-down when deselected CMOS for optimum sp	Cypress Semiconductor
CY62146EV30	4-Mbit (256K x 16) Static RAM CY62146EV30 MoBL® 4-Mbit (256K x 16) Static RAM Features • Very high speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin compatible with CY62146DV30 • Ultra low standby power — Typical standby current: 1 µA — Maximum standby current: 7 µA • Ultra low active p	Cypress Semiconductor
CY62148	512K x 8 MoBL Static RAM 1CY 621 48 fax id: 1079 PRELIMINARY CY62148 512K x 8 Static RAM Features • 4.5V−5.5V operation • CMOS for optimum speed/power • Low active power — 660 mW (max.) • Low standby power (L version) — 2.75 mW (max.) • Automatic power-down when d	Cypress Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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