Datasheet CY62146G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	CY62146G	4-Mbit (256K words x 16 bit) Static RAM CY62146G/CY62146GE CY62146GSL/CY62146GESL MoBL® 4-Mbit (256K words × 16 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (256K words × 16 bit) Static RAM with Error-Correcting Code (ECC) Features ■ High speed: 45 ns/55 ns ■ Ultra-low standby power ❐ Typical standby current: 3.5 A	Cypress	data
2	CY62146GE	4-Mbit (256K words x 16 bit) Static RAM CY62146G/CY62146GE CY62146GSL/CY62146GESL MoBL® 4-Mbit (256K words × 16 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (256K words × 16 bit) Static RAM with Error-Correcting Code (ECC) Features ■ High speed: 45 ns/55 ns ■ Ultra-low standby power ❐ Typical standby current: 3.5 A	Cypress	data
3	CY62146GESL	4-Mbit (256K words x 16 bit) Static RAM CY62146G/CY62146GE CY62146GSL/CY62146GESL MoBL® 4-Mbit (256K words × 16 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (256K words × 16 bit) Static RAM with Error-Correcting Code (ECC) Features ■ High speed: 45 ns/55 ns ■ Ultra-low standby power ❐ Typical standby current: 3.5 A	Cypress	data
4	CY62146GN	4-Mbit (256K x 16) Static RAM CY62146GN MoBL® 4-Mbit (256K × 16) Static RAM 4-Mbit (256K × 16) Static RAM Features ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ■ Wide voltage range: 2.20 V to 3.60 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 3.5 	Cypress	data
5	CY62146GSL	4-Mbit (256K words x 16 bit) Static RAM CY62146G/CY62146GE CY62146GSL/CY62146GESL MoBL® 4-Mbit (256K words × 16 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (256K words × 16 bit) Static RAM with Error-Correcting Code (ECC) Features ■ High speed: 45 ns/55 ns ■ Ultra-low standby power ❐ Typical standby current: 3.5 A	Cypress	data

CY6 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	CY6116A	2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993 Features D D D D D D D Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect	Cypress Semiconductor	data
2	CY6116A-20PC	2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993 Features D D D D D D D Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect	Cypress Semiconductor	data
3	CY6116A-25DMB	2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993 Features D D D D D D D Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect	Cypress Semiconductor	data
4	CY6116A-25LMB	2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993 Features D D D D D D D Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect	Cypress Semiconductor	data
5	CY6116A-25PC	2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993 Features D D D D D D D Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect	Cypress Semiconductor	data
6	CY6116A-35DMB	2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993 Features D D D D D D D Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect	Cypress Semiconductor	data
7	CY6116A-35LMB	2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993 Features D D D D D D D Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect	Cypress Semiconductor	data

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Número de pieza	Descripción	Fabricantes	PDF
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