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Datasheet CY62138V Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | CY62138V | 256K x 8 Static RAM 7C10
CY7C1020
32K x 16 Static RAM
Features
• 5.0V operation (± 10%) • High speed — tAA = 10 ns • Low active power — 825 mW (max., 10 ns, “L” version) • Very Low standby power — 550 µW (max., “L” version) • Automatic power-down when deselected • Independent Control of Up | Cypress Semiconductor | data |
2 | CY62138VLL-70BAI | 256K x 8 Static RAM 7C10
CY7C1020
32K x 16 Static RAM
Features
• 5.0V operation (± 10%) • High speed — tAA = 10 ns • Low active power — 825 mW (max., 10 ns, “L” version) • Very Low standby power — 550 µW (max., “L” version) • Automatic power-down when deselected • Independent Control of Up | Cypress Semiconductor | data |
CY6 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | CY6116A | 2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993
Features
D D D D D D D
Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect Cypress Semiconductor data | | |
2 | CY6116A-20PC | 2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993
Features
D D D D D D D
Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect Cypress Semiconductor data | | |
3 | CY6116A-25DMB | 2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993
Features
D D D D D D D
Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect Cypress Semiconductor data | | |
4 | CY6116A-25LMB | 2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993
Features
D D D D D D D
Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect Cypress Semiconductor data | | |
5 | CY6116A-25PC | 2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993
Features
D D D D D D D
Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect Cypress Semiconductor data | | |
6 | CY6116A-35DMB | 2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993
Features
D D D D D D D
Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect Cypress Semiconductor data | | |
7 | CY6116A-35LMB | 2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993
Features
D D D D D D D
Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect Cypress Semiconductor data | |
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Número de pieza | Descripción | Fabricantes | |
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