CSR8670 データシート PDFこの部品の機能は「Bluetooth Modules」です。 |
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部品番号 |
CSR8670 Low-power Solution for DSP Intensive Audio Applications Features ■ ■ ■ BlueCore® CSR8670™ BGA Low-power Solution for DSP Intensive Audio Applications Production Information CSR8670C Issue 2 ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Bluetoot CSR |
CSR8670 Bluetooth Modules CSR8670 Bluetooth Modules SBC2015-B Preliminary Specification Version 1.0 04-JAN.-2014 © 2014 Smartdesign Technology Co., Ltd. All rights reserved. Smartdesign Confidential - Information is subject Smartdesign |
文字列「 CSR8670 」「 8670 」で始まる検索結果です。 |
部品説明 |
3VD186700YL HIGH VOLTAGE MOSFET CHIPS 3VD186700YL 3VD186700YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD186700YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ ¾ ¾ ¾ ¾ Advanced termination scheme to provide enhanced voltage-blocking Silan Microelectronics |
5962-88670043X Electrically Erasable Industry Standard SPLD This is an abbreviated datasheet. Contact a Cypress representative for complete specifications. For new designs, please refer to the PALCE22V10 PALC22V10B Reprogrammable CMOS PAL® Device Features • Advanced second generation PAL architecture • Low power — 90 mA max. stan Cypress Semiconductor |
5962-886700xxX Electrically Erasable Industry Standard SPLD This is an abbreviated datasheet. Contact a Cypress representative for complete specifications. For new designs, please refer to the PALCE22V10 PALC22V10B Reprogrammable CMOS PAL® Device Features • Advanced second generation PAL architecture • Low power — 90 mA max. stan Cypress Semiconductor |
BTM8670 Bluetooth Module http://www.buddies-tech.com BTM8670 DATASHEET BTM8670 Bluetooth Module Data Sheet Document Type: Document Version: Release Date: Bluetooth Module Datasheet V1.0 March 06, 2013 Copyright 2012 by Buddies Technology Limited. All Rights Reserved. Reproduction of this document, i Buddies |
FDMS8670 N-Channel Power Trench MOSFET FDMS8670 N-Channel Power Trench® MOSFET May 2009 FDMS8670 N-Channel Power Trench® MOSFET 30V, 42A, 2.6m: tm Features General Description Max rDS(on) = 2.6m: at VGS = 10V, ID = 24A Max rDS(on) = 3.8m: at VGS = 4.5V, ID = 18A 100% UIL Tested RoHS Compliant Thi Fairchild Semiconductor |
FDMS8670AS N-Channel MOSFET FDMS8670AS N-Channel PowerTrench® SyncFETTM April 2008 FDMS8670AS N-Channel PowerTrench® SyncFETTM 30V, 42A, 3.0mΩ tm Features General Description Max rDS(on) = 3.0mΩ at VGS = 10V, ID = 23A Max rDS(on) = 4.7mΩ at VGS = 4.5V, ID = 18A Advanced Package and Si Fairchild Semiconductor |
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