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Datasheet CS8N90A8 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 CS8N90A8   Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS8N90 A8 ○R General Description： CS8N90 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 900 8 130 1.2 switching performance and enhance
Huajing Microelectronics
Huajing Microelectronics		 datasheet CS8N90A8 pdf

CS8N9 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CS8N90FA9HD

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS8N90F A9HD ○R General Description： CS8N90F A9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy
 Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics
CS8N90FA9

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS8N90F A9 ○R General Description： CS8N90F A9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Th
 Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics
CS8N90A8

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS8N90 A8 ○R General Description： CS8N90 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 900 8 130 1.2 switching perf
 Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics


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SPS122

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