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Datasheet CS8N60A8D Equivalent ( PDF )

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1 CS8N60A8D   Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS8N60 A8D ○R General Description： CS8N60 A8D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be
 Huajing Microelectronics
Huajing Microelectronics		 datasheet CS8N60A8D pdf

CS8N60 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CS8N60

N-Channel MOSFET

BR8N60(CS8N60) N-Channel MOSFET/N 沟 MOS 晶体管 用途:用于高效 DC/DC 转换和功率开关。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. 特点: 低栅电荷,低反馈电容,开关速度快。 F
 FOSHAN BLUE ROCKET
FOSHAN BLUE ROCKET		 datasheet pdf - FOSHAN BLUE ROCKET
CS8N60FA9H

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS8N60F A9H ○R General Description： CS8N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 8 45 0.8 pe
 HUAJING MICROELECTRONICS
HUAJING MICROELECTRONICS		 datasheet pdf - HUAJING MICROELECTRONICS
CS8N60A8H

Silicon N-Channel Power MOSFET

Huajing Discrete Devices Silicon N-Channel Power MOSFET ○R CS8N60 A8H General Description： CS8N60 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance
 HUAJING MICROELECTRONICS
HUAJING MICROELECTRONICS		 datasheet pdf - HUAJING MICROELECTRONICS


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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