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Datasheet CS8N25A4H Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 CS8N25A4H   Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS8N25 A4H ○R General Description： CS8N25 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON)Typ 250 8 83 0.4
Huajing Microelectronics
Huajing Microelectronics		 datasheet CS8N25A4H pdf

CS8N25 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CS8N25A4H

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS8N25 A4H ○R General Description： CS8N25 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON
 Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics
CS8N25FA9

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS8N25F A9 ○R General Description： CS8N25F A9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON
 Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics
CS8N25A8H

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS8N25 A8H ○R General Description： CS8N25 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON
 Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics


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Número de pieza Descripción Fabricantes PDF
SPS122

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 Sanken
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