|
![]() |
CS8563S データシート PDF ( Data ) |
番号 | 部品番号 | 部品説明 | メーカ | |
1 | CS8563S | CS8563S |
![]() ETC |
![]() |
CS8 データシート - 検索結果 |
部品番号 | 部品説明 | メーカ | |
CS8151YDWFR16 | 5V/ 100mA Low Dropout Linear Regulator with WATCHDOG/ RESET/ & WAKE UP CS8151 CS8151 5V, 100mA Low Dropout Linear Regulator with WATCHDOG, RESET, & WAKE UP Description The CS8151 is a precision 5V, 100mA micro-power voltage regulator with very low quiescent current (400µA typical at 200µA load). The 5V output is accurate within ±2% and supplies |
![]() Cherry Semiconductor Corporation |
![]() |
CS8371 | Dual Regulator CS8371 8.0 V/1.0 A, 5.0 V/250 mA Dual Regulator with Independent Output Enables and NOCAPt The CS8371 is an 8.0 V/5.0 V dual output linear regulator. The 8.0 V ±5.0% output sources 1.0 A, while the 5.0 V ±5.0% output sources 250 mA. Each output is controlle |
![]() ON Semiconductor |
![]() |
CS8321 | Low Dropout Linear Regulator CS8321 Micropower 5.0 V, 150 mA Low Dropout Linear Regulator The CS8321 is a precision 5.0 V micropower voltage regulator with very low quiescent current (140 mA typ at 1.0 mA load). The 5.0 V output is accurate within ±2% and supplies 150 mA of load current |
![]() ON Semiconductor |
![]() |
CS840FA9D | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS840F A9D ○R General Description: CS840F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 500 7 35 0.68 per |
![]() Huajing Microelectronics |
![]() |
CS800 | Phase Control Thyristor Phase Control Thyristor CS 800 ITRMS = 1600 A ITAVM = 800 A VRRM = 1200 -1600 V VRSM VDSM V 1200 1400 1600 V RRM V DRM V Type 1 2 2 4 3 3 4 1200 1400 1600 CS 800 - 12io1 CS 800 - 14io1 CS 800 - 16io1 1 Symbol ITRMS ITAVM I TSM Test Conditions TC = 80 |
![]() IXYS Corporation |
![]() |
CS8N90FA9 | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS8N90F A9 ○R General Description: CS8N90F A9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Th |
![]() Huajing Microelectronics |
![]() |
Search Keywords : |
DataSheet.jpは、半導体や電子部品のデータシートをPDFファイルとして無料提供しています。 |