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Datasheet CS7N65FA9TDY Equivalent ( PDF )

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1 CS7N65FA9TDY   Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS7N65F A9TDY ○R General Description： CS7N65F A9TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 650 7 40 1.1 performance and en
 Huajing Microelectronics
Huajing Microelectronics		 datasheet CS7N65FA9TDY pdf

CS7N65FA9 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CS7N65FA9D

Silicon N-Channel Power MOSFET

Huajing Discrete Devices Silicon N-Channel Power MOSFET ○R CS7N65F A9D General Description： CS7N65F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS
 Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics
CS7N65FA9R

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS7N65F A9R ○R General Description： CS7N65F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics
CS7N65FA9TDY

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS7N65F A9TDY ○R General Description： CS7N65F A9TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 650 7 40 1.1
 Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics


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SPS122

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