CS7N60 データシート PDFこの部品の機能は「Vdmos Type Field Effect Transistor」です。 |
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部品番号 |
CS7N60 VDMOS type field effect transistor 汇川电子 CS7N60 型 VDMOS 场效应晶体管 用途:主要用于电源适配器、充电器等线性放大和功率开关电路。 特点:开关速度快,通态电阻低,驱动电路简 Kymmene Electronics |
文字列「 CS7N60 」「 7N60 」で始まる検索結果です。 |
部品説明 |
CS7N60A3R Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS7N60 A3R ○R General Description: CS7N60 A3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Th Huajing Microelectronics |
CS7N60A4R Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS7N60 A4R ○R General Description: CS7N60 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Th Huajing Microelectronics |
CS7N60A7HD Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS7N60 A7HD ○R General Description: CS7N60 A7HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ performance and Huajing Microelectronics |
CS7N60A8HD Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS7N60 A8HD ○R General Description: CS7N60 A8HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Huajing Microelectronics |
CS7N60FA9HD Silicon N-Channel Power MOSFET Huajing Discrete Devices Silicon N-Channel Power MOSFET ○R CS7N60FA9HD General Description: CS7N60FA9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhan Huajing Discrete Devices |
CS7N60FA9HDY Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS7N60F A9HDY ○R General Description: CS7N60F A9HDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche ener Huajing Microelectronics |
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