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Datasheet CS730A4RD Equivalent ( PDF )

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1 CS730A4RD   Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS730 A4RD ○R General Description： CS730 A4RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used
 Huajing Microelectronics
Huajing Microelectronics		 datasheet CS730A4RD pdf

CS730A Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CS730A8H

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS730 A8H ○R General Description： CS730 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The
Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics
CS730A8RD

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS730 A8RD ○R General Description： CS730 A8RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD(TC=25℃) RDS(ON)Typ 400 6 75 0.75 switching per
 Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics
CS730A4RD

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS730 A4RD ○R General Description： CS730 A4RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The tr
 Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics


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SPS122

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