CS6N60A4H データシート PDFこの部品の機能は「SilICon N-channel Power Mosfet」です。 |
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部品番号 |
CS6N60A4H Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS6N60 A4H ○R General Description: CS6N60 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduct Huajing Microelectronics |
文字列「 CS6N60A4 」「 6N60A4H 」で始まる検索結果です。 |
部品説明 |
CS6N60A4D Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS6N60 A4D ○R General Description: CS6N60 A4D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 6 95 1.0 perf Huajing Microelectronics |
CS6N60A4TY Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS6N60 A4TY ○R General Description: CS6N60 A4TY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The Huajing Microelectronics |
2020-6604-06 DirectionalCouplersMini/OctaveBandwidth Directional Couplers Mini, Octave Bandwidth V 3.00 2020 Series Features n n n n OUTLINE DRAWING Smallest and Lightest Couplers Available 0.5 through 18 GHz, including Wideband Units High Directivity - Low VSWR Meets MIL-E-5400 Environments Description These miniature couple TycoElectronics |
2N6604 HIGH FREQUENCY TRANSISTOR 2N6604 JAN, JTX, JTXV AVAILABLE CASE 303-01, STYLE 1 HIGH FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS (TA = 25°C Free Air Temperature) Rating Symbol Value Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Devi Motorola Semiconductors |
2SB166040ML SCHOTTKY BARRIER DIODE CHIPS 2SB166040ML 2SB166040ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø Ø Ø Ø Ø Ø 2SB166040ML is a schottky barrier diode chips Lb Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capabilit Silan Microelectronics Joint-stock |
6604 20V Complementary MOSFET Shenzhen Tuofeng Semiconductor Technology Co., Ltd 6604 20V Complementary MOSFET Product Summary N-Channel VDS= 20V ID= 3.4A (VGS=4.5V) RDS(ON) < 65mΩ (VGS=4.5V) < 75mΩ (VGS=2.5V) < 100mΩ (VGS=1.8V) P-Channel -20V -2.5A (VGS=-4.5V) RDS(ON) < 75mΩ (VGS=-4.5V) < 105mΩ ( Tuofeng Semiconductor |
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