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Datasheet CS6N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 14 | CS6N60 | VDMOS 华晶分立器件
CS6N60(F)
CS6N60(F)型 VDMOS 晶体管
1.概述与特点
CS6N60(F)是 N 沟道 600V 系列 VDMOS 晶体管， 主要用于电源适配器、 充电器等各种功率开关 电路。 具有如下特点： ● 开关速度快 ● 通态电阻小 ● 可并联使用 ● 驱动简� |
 ETC |
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| 13 | CS6N60A3D | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS6N60 A3D
○R
General Description：
CS6N60 A3D, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be |
 Huajing Microelectronics |
|
| 12 | CS6N60A3HDY | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS6N60 A3HDY
○R
General Description：
CS6N60 A3HDY, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
ca |
Huajing Microelectronics |
|
| 11 | CS6N60A3TY | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS6N60 A3TY
○R
General Description：
CS6N60 A3TY, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can |
Huajing Microelectronics |
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