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Datasheet CS3N60A3 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 CS3N60A3   Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS3N60 A3 ○R General Description: VDSS 600 V CS3N60 A3 the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 55 W which reduce the conduction loss, improve switching RDS(ON)Typ 2.7 Ω performance
Huajing Microelectronics
Huajing Microelectronics
datasheet CS3N60A3 pdf

CS3N6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CS3N65A4H-G

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS3N65 A4H-G ○R General Description: VDSS 650 V CS3N65 A4H-G the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 55 W which reduce the conduction loss, improve switching RDS(ON
Huajing Microelectronics
Huajing Microelectronics
datasheet pdf - Huajing Microelectronics
CS3N60A3

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS3N60 A3 ○R General Description: VDSS 600 V CS3N60 A3 the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 55 W which reduce the conduction loss, improve switching RDS(ON)Typ
Huajing Microelectronics
Huajing Microelectronics
datasheet pdf - Huajing Microelectronics


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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