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Datasheet CS3N40A23 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 CS3N40A23   Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS3N40 A23 ○R General Description： VDSS 400 V CS3N40 A23, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 2.5 W which reduce the conduction loss, improve switching RDS(ON)TYP 2.8 Ω perform
 Huajing Microelectronics
Huajing Microelectronics		 datasheet CS3N40A23 pdf

CS3N40 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CS3N40A23

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS3N40 A23 ○R General Description： VDSS 400 V CS3N40 A23, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 2.5 W which reduce the conduction loss, improve switching RDS(ON)T
 Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics
CS3N40A3H

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS3N40 A3H ○R General Description： VDSS 400 V CS3N40 A3H, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 30 W which reduce the conduction loss, improve switching RDS(ON)TY
 Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics
CS3N40A4H

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS3N40 A4H ○R General Description： VDSS 400 V CS3N40 A4H, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 30 W which reduce the conduction loss, improve switching RDS(ON)TY
 Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics


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Número de pieza Descripción Fabricantes PDF
SPS122

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