CS2N65A4HY データシート PDFこの部品の機能は「SilICon N-channel Power Mosfet」です。 |
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部品番号 |
CS2N65A4HY Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS2N65 A4HY ○R General Description: CS2N65 A4HY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the co Huajing Microelectronics |
文字列「 CS2N65A4 」「 2N65A4HY 」で始まる検索結果です。 |
部品説明 |
2SC2654 SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2654 DESCRIPTION ·With TO-220 package ·Complement to type 2SA1129 ·Low collector saturation votage APPLICATIONS ·For low-frequency power amplifiers and mid-speed switching ap SavantIC |
2SD2654 General Purpose Transistor (50V/ 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S zFeatures 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. (Typ. VCE(sat)=0.3V at I ROHM Semiconductor |
2SD2654 (2SD2xxx) General Purpose Transistor (50V/ 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S zFeatures 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. (Typ. VCE(sat)=0.3V at I ROHM Semiconductor |
2SK2654 N-channel MOS-FET 2SK2654-01 FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 900V 2Ω 8A 150W > Outline Drawing > Applications Switching Regulators UPS Fuji Electric |
2SK2654-01 N-channel MOS-FET 2SK2654-01 FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 900V 2Ω 8A 150W > Outline Drawing > Applications Switching Regulators UPS Fuji Electric |
AD22654 3-Vrms Cap-Less Line Driver ESMT/EMP Features z Operation Voltage: 3V to 5.5V z Cap-less Output - Eliminates Output Capacitors - Improves Low Frequency Response - Reduces POP/Clicks z Low Noise and THD - SNR > 102dB - Typical Vn < 12uVrms - THD+N < 0.02% z Maximum Output Voltage Swing into 2.5k Load - 2Vrms Elite Semiconductor |
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