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CS2N60A4H データシート PDF 検索

番号 部品番号 部品説明 メーカ PDF
1 CS2N60A4H

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS2N60 A4H ○R General Description: VDSS 600 V CS2N60 A4H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD

Huajing Microelectronics
Huajing Microelectronics
CS2N60A4H データシート pdf




CS2N60 データシート - 検索結果

部品番号 部品説明 メーカ PDF
CS2N60A3H

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS2N60 A3H ○R General Description: VDSS 600 V CS2N60 A3H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Ty

Huajing Microelectronics
Huajing Microelectronics
CS2N60A4H データシート pdf
CS2N60A4T

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS2N60 A4T ○R General Description: CS2N60 A4T, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Th

Huajing Microelectronics
Huajing Microelectronics
CS2N60A4H データシート pdf
CS2N60FA9H

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS2N60F A9H ○R General Description: VDSS 600 V CS2N60F A9H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 24 W which reduce the conduction loss, improve switching RDS(ON)

Huajing Microelectronics
Huajing Microelectronics
CS2N60A4H データシート pdf
CS2N60A7H

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS2N60 A7H ○R General Description: VDSS 600 V CS2N60 A7H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 24 W which reduce the conduction loss, improve switching RDS(ON)Ty

Huajing Microelectronics
Huajing Microelectronics
CS2N60A4H データシート pdf


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