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Datasheet CS1N60 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
8 CS1N60   VDMOS

»ª¾§·ÖÁ¢Æ÷¼þ CS1N60(F) CS1N60(F)ÐÍ 1.¸ÅÊöÓëÌصã CS1N60(F)ÊÇ ¹Øµç· ¾ßÓÐÈçÏÂÌص㠿ª¹ØËÙ¶Èì ̬ͨµç×èС ¿É²¢ÁªÊ¹Óà Çý¶¯¼òµ¥ ·â×°ÐÎʽ ²úÆ·Ãû³ CS1N60 CS1N60F ·â×°ÐÎʽ TO-220 TO-2
EDN
EDN
datasheet CS1N60 pdf
7 CS1N60A1H   Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS1N60 A1H ○R General Description: CS1N60 A1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 600 0.8 3 11 performance and enhance
Huajing Microelectronics
Huajing Microelectronics
datasheet CS1N60A1H pdf
6 CS1N60A3H   Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS1N60 A3H ○R General Description: VDSS 600 V CS1N60 A3H, the silicon N-channel Enhanced ID 0.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 25 W which reduce the conduction loss, improve switching RDS(ON)Typ 11 Ω perfor
Huajing Microelectronics
Huajing Microelectronics
datasheet CS1N60A3H pdf
5 CS1N60B1R   Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS1N60 B1R ○R General Description: CS1N60 B1R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 600 1.5 3 7 performance and enhance
Huajing Microelectronics
Huajing Microelectronics
datasheet CS1N60B1R pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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