CS12N60 データシート PDFこの部品の機能は「N-channel Mosfet」です。 |
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部品番号 |
CS12N60 N-CHANNEL MOSFET BR12N60(CS12N60) N-CHANNEL MOSFET/N 沟道 MOS 晶体管 用途: 该器件适用于高效电源模块,主动式 PFC 电路和基于半桥拓扑结构的电子节能灯。 Purpose: These devices a BLUE ROCKET ELECTRONICS |
文字列「 CS12N60 」「 12N60 」で始まる検索結果です。 |
部品説明 |
CS12N60A8H Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS12N60 A8H ○R General Description: CS12N60 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Huajing Microelectronics |
CS12N60A8HD Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS12N60 A8HD ○R XGeneral Description: CS12N60 A8HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energ Huajing Microelectronics |
CS12N60A8R Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS12N60 A8R ○R General Description: CS12N60 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Huajing Microelectronics |
CS12N60FA9H Silicon N-Channel Power MOSFET + , ('- . ' / - ƻ # ' - 0. ˖ 3 ! !" #$ %& / @ 0 1ćA $" ' & ( ( )%& * @A 6 +11 ' $ % &) * &$"+ & & !( *& ( %'& ' $ &( #& " ) ) (& , $ & ## "+ % - $ # &) ' &' .+ -˖ &+ -. . ( $ ! - -. 1!2- Qİ. $ #. ( 1 30 ' . 45* 6 $ ! / - . -) 0 . -1 30 4 0 6 Huajing Microelectronics |
CS12N60FA9HD Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS12N60F A9HD ○R General Description: CS12N60F A9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 600 12 55 0.5 switch Huajing Microelectronics |
CS12N60FA9R Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS12N60F A9R ○R General Description: CS12N60F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy Huajing Microelectronics |
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