Silicon N-Channel Power MOSFET CS10N65 A8R ○R General Description： CS10N65 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The

Silicon N-Channel Power MOSFET CS1N80 A4H ○R General Description： CS1N80 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ performance and e

CS10 Series Ceramic Surface Mount Crystals Specifications: • Frequency/Temperature: ±50ppm, -10°C ~ 60°C • Operating Temperature: -40°C ~ 85°C • Drive Level: 50µW Max. • Frequency Tolerance: ±30ppm • Load Capacitance: 18.0pF • Equivalent S

CS10 Series Ceramic Surface Mount Crystals Specifications: • Frequency/Temperature: ±50ppm, -10°C ~ 60°C • Operating Temperature: -40°C ~ 85°C • Drive Level: 50µW Max. • Frequency Tolerance: ±30ppm • Load Capacitance: 18.0pF • Equivalent S

CS1107 Single Relay Driver IC This ASIC provides up to 350 mA of drive current for driving a relay. On–chip diagnostic features include open and short circuit detection in the on state, duty cycle current limit control, and thermal shutdown. Faults are repo

www.vishay.com CS1D, CS1G, CS1J, CS1K, CS1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier DO-214AC (SMA) PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 30 A IR VF at IF = 1.0 A (TA = 125 °C) 5.0 μA 0.98 V T