CR50TE-DLF PDF Datasheet

CERLED® Ceramic Chip SMD SMD – Wide-Viewing Angle CR 50 TE Photo Transistor D A T A S H E E T Description The solder pads provide an excellent heat sink. For multi-sensors just choose 2 or more CERLEDs. Clear epoxy lens. Special Type (CR50TE-DLF) with daylight filter on request. Available on special order in 8 mm blister tape or solid strips of up to 1

BCR 503 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, drive circuit • Built in bias resistor (R1=2.2kΩ, R2=2.2kΩ) Type BCR 503 Marking Ordering Code XAs Q62702-C2370 Pin Configuration 1=B 2=E 3=C Package SOT-23 Maximum Ratings Param

BCR503 NPN Silicon Digital Transistor
Switching circuit, inverter, interface circuit, 3 driver circuit
Built in bias resistor (R1=2.2k, R2=2.2k) C 3 2 1 VPS05161 R1 R2 1 B 2 E EHA07184 Type BCR503 Maximum Ratings Parameter Marking XAs 1=B Pin Configuration 2=E 3=C

BCR 505 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=10kΩ) Type BCR 505 Marking Ordering Code XWs Q62702-C2354 Pin Configuration 1=B 2=E 3=C Package SOT-23 Maximum Ratings Param

BCR505 NPN Silicon Digital Transistor
Switching circuit, inverter, interface circuit, 3 driver circuit
Built in bias resistor (R1=2.2k, R2=10k) C 3 2 1 VPS05161 R1 R2 1 B 2 E EHA07184 Type BCR505 Maximum Ratings Parameter Marking XWs 1=B Pin Configuration 2=E 3=C

DCR504ST DCR504ST Phase Control Thyristor Advance Information Supersedes January 2000version, DS4448 -4.0 DS4448 -5.0 July 2001 FEATURES s Double Side Cooling s High Surge Capability s High Mean Current s Fatigue Free KEY PARAMETERS VDRM IT(AV) ITSM dVdt dI/dt 1400V 456A 6800A