Datasheet CPM2-1200-0080B Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CPM2-1200-0080B	Silicon Carbide Power MOSFET VDS 1200 V CPM2-1200-0080B Silicon Carbide Power MOSFET TM Z-FET MOSFET Features Package ID @ 25˚C 31.6 A RDS(on) 80 mΩ N-Channel Enhancement Mode • • • • • • High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Paralle	CREE

CPM2-1200-00 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CPM2-1200-0025B	Silicon Carbide Power MOSFET VDS 1200 V CPM2-1200-0025B Silicon Carbide Power MOSFET TM Z-FET MOSFET Features Package ID @ 120˚C 50 A RDS(on) 25 mΩ N-Channel Enhancement Mode • • • • • • High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(	Cree
CPM2-1200-0080B	Silicon Carbide Power MOSFET VDS 1200 V CPM2-1200-0080B Silicon Carbide Power MOSFET TM Z-FET MOSFET Features Package ID @ 25˚C 31.6 A RDS(on) 80 mΩ N-Channel Enhancement Mode • • • • • • High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS	CREE
CPM2-1200-0040B	Silicon Carbide Power MOSFET VDS 1200 V CPM2-1200-0040B Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C 36 A RDS(on) 40 mΩ N-Channel Enhancement Mode Features Chip Outline • New C2M SiC MOSFET technlogy • High Blocking Voltage with Low On-Resistance • High S	Cree

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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