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Datasheet CMS06 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | CMS06 | TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CMS06
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CMS06
Switching Mode Power Supply Applications Portable Equipment Battery Applications
· · · · Forward voltage: VFM = 0.37 V (max) Average forward current: IF (AV) = 2.0 A Repetitive peak reverse voltage: VRRM = 30 V Suitable for co | Toshiba Semiconductor | rectifier |
CMS Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | CMS-S032-020 | SCHOTTKY BARRIER DIODE
CMS-S032-020
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
0.814 * 0.814 mm
2
Bond Pad size(B)) :
0.686 * 0.686 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Me Champion Microelectronic diode | | |
2 | CMS-S032-040 | SCHOTTKY BARRIER DIODE
CMS-S032-040
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
0.814 * 0.814 mm
2
Bond Pad size(B) :
0.686 * 0.686 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Met Champion Microelectronic diode | | |
3 | CMS-S035-020 | SCHOTTKY BARRIER DIODE
CMS-S035-020
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
0.889 * 0.889 mm
2
Bond Pad size(B) :
0.762 * 0.762 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Met Champion Microelectronic diode | | |
4 | CMS-S035-040 | SCHOTTKY BARRIER DIODE
CMS-S035-040
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
0.889 * 0.889 mm
2
Bond Pad size(B) :
0.762 * 0.762 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Met Champion Microelectronic diode | | |
5 | CMS-S040-020 | SCHOTTKY BARRIER DIODE
CMS-S040-020
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
1.016 * 1.016 mm
2
Bond Pad size(B) :
0.889 * 0.889 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Met Champion Microelectronic diode | | |
6 | CMS-S040-040 | SCHOTTKY BARRIER DIODE CMS-S040-040
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
1.016 * 1.016 mm
2
Bond Pad size(B) :
0.889 * 0.889 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Metalization :
Cathode Champion diode | | |
7 | CMS-S040-040L | SCHOTTKY BARRIER DIODE
CMS-S040-040L
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
1.016 * 1.016 mm
2
Bond Pad size(B) :
0.889 * 0.889 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Me Champion Microelectronic diode | |
Esta página es del resultado de búsqueda del CMS06. Si pulsa el resultado de búsqueda de CMS06 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
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