CMM1110-BD データシート PDFこの部品の機能は「Gaas MmIC Low Noise Amplifier」です。 |
検索結果を表示する |
部品番号 |
CMM1110-BD GaAs MMIC Low Noise Amplifier 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier January 2007 - Rev 29-Jan-07 CMM1110-BD Chip Device Layout Features Self Bias Architecture 16.0 dB Small Signal Gain 2.5 dB Noise Figure +13.0 dBm P1dB Com Mimix Broadband |
文字列「 CMM1110 」「 1110 」で始まる検索結果です。 |
部品説明 |
CMM1110 GaAs MMIC Low Noise Amplifier 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier May 2006 - Rev 01-May-06 CMM1110 Chip Device Layout Features Self Bias Architecture 16.0 dB Small Signal Gain 2.5 dB Noise Figure +13.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883 Method 2010 General Description M Mimix Broadband |
1110A 200 V - 1000 V Single Phase Bridge 200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time 1102A - 1110A 1102FA - 1110FA 1102UFA - 1110UFA ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage (Vrwm) Average Rectified Current @TC (Io) 55°C Vol ETC |
1110A Diode ( Rectifier ) American Microsemiconductor |
1110B (1110xB) Single Phase Bridge 200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time 1102B - 1110B 1102FB - 1110FB 1102UFB - 1110UFB ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage (Vrwm) Average Rectified Curre VMI |
1110B Diode ( Rectifier ) American Microsemiconductor |
1110C (1110xC) Single Phase Bridge 200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time 1102C - 1110C 1102FC - 1110FC 1102UFC - 1110UFC ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage (Vrwm) Average Rectified Curre VMI |
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