CM200E3U-12H データシート PDFこの部品の機能は「Chopper Igbtmod 200 Amperes/600 Volts」です。 |
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部品番号 |
CM200E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE MITSUBISHI IGBT MODULES CM200E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE TC Measured Point E F G E2 A B H J D C G2 G2 U C1 3-M5 Nuts O P O Q CM C2E1 L 2 - Mounting Holes (6.5 Dia.) V M Mitsubishi Electric Semiconductor |
CM200E3U-12H Chopper IGBTMOD 200 Amperes/600 Volts CM200E3U-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Chopper IGBTMOD™ U-Series Module 200 Amperes/600 Volts A N P - NUTS (3 PLACES) .47 [12mm] DEEP D Q( Powerex Power Semiconductors |
文字列「 CM200E3U12 」「 200E3U 」で始まる検索結果です。 |
部品説明 |
2003 HIGH-VOLTAGE/HIGH-CURRENTDARLINGTONARRAYS 2003 THRU 2024 HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 Ideally suited for interfacing between low-level logic circuitry and multiple peripheral power loads, the Series ULN20xxA/L high-voltage, high-current Darlington arrays feature co AllegroMicroSystems |
2003 Microwave CW Bipolar / 3 Watts - 28 Colts / 2000 Mhz Acrian |
2003 Case Outline 55BT-1 / Style 1 2003 3 Watt - 28 Volts, Class C Microwave 2000 MHz GENERAL DESCRIPTION The 2003 is a COMMON BASE transistor capable of providing 3 Watts Class C, RF output power at 2000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. Th GHZ Technology |
2SC2003 NPN SILICON TRANSISTOR NEC |
2SC2003 NPN SIlicon Transistor NEC |
2SK2003-01M N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK2003-01M DESCRIPTION ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed APPLICATIONS ·Switching regulators ·UPS ·General purpose power amplif Inchange Semiconductor |
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