CM1457 データシート PDFこの部品の機能は「8-channel Emi Filter Array」です。 |
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部品番号 |
CM1457 8-Channel EMI Filter Array Praetorian III® 4, 6, 8-Channel EMI Filter Array with ESD Protection CM1457 Features • • www.Datasheet.jp Functional Description The CM1457 is an inductor-based (L-C) EMI filter array with E ON Semiconductor |
文字列「 CM1457 」「 1457 」で始まる検索結果です。 |
部品説明 |
1457 Bulk Metal Foil Technology 18 Pin Dual-In-Line Hermetic Resistor Network 1457 Vishay Foil Resistors Bulk Metal® Foil Technology 18 Pin Dual-In-Line Hermetic Resistor Network The 18 pin “L” brazed DIP is still a 0.300" pin spacing package but overlaps the mounting holes, providing added chip capacity. It is a good choice for a 14 bit R/2R ladder Vishay Siliconix |
1457 Bulk Metal Foil Technology 18 Pin Dual-In-Line Hermetic Resistor Network 1457 Vishay Foil Resistors Bulk Metal® Foil Technology 18 Pin Dual-In-Line Hermetic Resistor Network The 18 pin “L” brazed DIP is still a 0.300" pin spacing package but overlaps the mounting holes, providing added chip capacity. It is a good choice for a 14 bit R/2R ladder Vishay Siliconix |
2SB1457 TRANSISTOR (MICRO MOTOR DRIVE/ HAMMER DRIVE / POWER SWITCHING/ AMPLIFIER APPLICATIONS) Toshiba Semiconductor |
2SD1457 Silicon NPN triple diffusion planar type Darlington(For power amplification) Power Transistors 2SD1457, 2SD1457A Silicon NPN triple diffusion planar type Darlington For power amplification 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 3.2 s Features q q q 16.2±0.5 12.5 3.5 Solder Dip High foward current transfer ratio hFE High collector to base voltage VCBO Panasonic Semiconductor |
2SD1457 SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1457 2SD1457A DESCRIPTION ·With TO-3PFa package ·High DC current gain ·DARLINGTON ·High VCBO APPLICATIONS ·For power amplification PINNING PIN 1 2 3 Base Collector;connecte SavantIC |
2SD1457A Silicon NPN triple diffusion planar type Darlington(For power amplification) Power Transistors 2SD1457, 2SD1457A Silicon NPN triple diffusion planar type Darlington For power amplification 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 3.2 s Features q q q 16.2±0.5 12.5 3.5 Solder Dip High foward current transfer ratio hFE High collector to base voltage VCBO Panasonic Semiconductor |
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