CJPF10N60 データシート PDFこの部品の機能は「N-channel Power Mosfet / Transistor」です。 |
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部品番号 |
CJPF10N60 N-Channel Power MOSFET / Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L/TO-220F Plastic-Encapsulate MOSFETS CJP10N60,CJPF10N60 N-Channel Power MOSFET Description The C JP10N60/CJPF10N60 is a high volt age and h JIANGSU CHANGJIANG |
文字列「 CJPF10N60 」「 10N60 」で始まる検索結果です。 |
部品説明 |
10N60 N-Channel Power MOSFET / Transistor SEMICONDUCTOR 10N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (10A, 600Volts) DESCRIPTION The Nell 10N60 is a three-terminal silicon device with current conduction capability of 10A, fast switching speed, low on-state resistance, breakdown voltage rating o nELL |
10N60 N-Channel Mosfet Transistor INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 10N60 ·FEATURES ·Drain Current –ID= 9.2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.83Ω(Max) ·Avalanche Energy Specified ·Fast Swit Inchange Semiconductor |
10N60 600/650 Volts N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD Power MOSFET 10N60 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate char Unisonic Technologies |
10N60 N-CHANNEL MOSFET 10N60(F,B,H) 10A mps,600 Volts N-CHANNEL MOSFET FEATURE 10A,600V,RDS(ON)=0.85Ω@VGS=10V/5A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 10N60 ITO-220AB 10N60F TO-263 10N60B TO-262 10N60H Absolute CHONGQING PINGYANG |
10N60A SSP10N60A Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ.) SSP10N60A BVDS Fairchild Semiconductor |
10N60B N-CHANNEL MOSFET 10N60(F,B,H) 10A mps,600 Volts N-CHANNEL MOSFET FEATURE 10A,600V,RDS(ON)=0.85Ω@VGS=10V/5A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 10N60 ITO-220AB 10N60F TO-263 10N60B TO-262 10N60H Absolute CHONGQING PINGYANG |
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