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Datasheet CJK2333 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1CJK2333P-Channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD 627-3L Plastic-Encapsulate MOSFETS CJK 3-channel MOSFET V(BR)DSS -12V RDS(on)MAX 28mΩ@-4.5V 32mΩ@-3.7V 40mΩ@-2.5V 63mΩ@-1.8V 150mΩ@-1.5V ID -6A SOT-23-3L 1. GATE 2. SOURCE 3. DRAIN FEATURE  TrenchFET Power MOSFET  Excell
JCET
JCET		mosfet


CJK Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1CJK2305P-Channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK2305 P-Channel 8-V(D-S) MOSFET V(BR)DSS -12V RDS(on)MAX 45mΩ@-4.5V  60mΩ@-2.5V  90mΩ@-1. 8V ID -4.1A  SOT-23-3L 1. GATE 2. SOURCE 3. DRAIN D FEATURE TrenchFET Power MOSFET APPLICATIONS z Load Swi
JCET
JCET		mosfet
2CJK2333P-Channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD 627-3L Plastic-Encapsulate MOSFETS CJK 3-channel MOSFET V(BR)DSS -12V RDS(on)MAX 28mΩ@-4.5V 32mΩ@-3.7V 40mΩ@-2.5V 63mΩ@-1.8V 150mΩ@-1.5V ID -6A SOT-23-3L 1. GATE 2. SOURCE 3. DRAIN FEATURE  TrenchFET Power MOSFET  Excell
JCET
JCET		mosfet
3CJK3400AN-Channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3400A N-Channel Enhancement Mode Field Effect Transistor V(BR)DSS 30 V RDS(on)MAX   32mΩ@10V  38mΩ@4.5V  45mΩ@2.5V   ID 5.8A SOT-23-3L 1. GATE 2. SOURCE 3. DRAIN D FEATURE APPLICATION z High d
JCET
JCET		mosfet
4CJK3401AP-Channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3401A P-Channel Enhancement Mode Field Effect Transistor V(BR)DSS -30V RDS(on)MAX 60 mΩ@-10V  70 mΩ@-4.5V 85 mΩ@-2.5V ID -4.2A  SOT-23-3L 1. GATE 2. SOURCE 3. DRAIN D FEATURE z High dense cell desi
JCET
JCET		mosfet
5CJK3407P-Channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK34 07 P-Channel 30-V(D-S) MOSFET V(BR)DSS -30V RDS(on)MAX \60mΩ@-10 V  87mΩ@-4.5V  ID -4.1A  SOT-23-3L 1. GATE 2. SOURCE 3. DRAIN D General Description The CJK3407 uses advanced trench technology t
JCET
JCET		mosfet
6CJK3415P-Channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3415 P-Channel 20-VV((DD--SS))MMOOSSFFEETT V(BR)DSS -20V RDS(on)MAX 50mΩ@-4.5V  60mΩ@-2.5V  73mΩ@-1. 8V ID -4.0A  FEATURE Excellent RDS(ON), low gate charge,low gate voltages APPLICATIONS Load swit
JCET
JCET		mosfet



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Número de pieza Descripción Fabricantes PDF
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