CHX1191-QDG データシート PDFこの部品の機能は「Gaas MonolithIC MICrowave IC」です。 |
検索結果を表示する |
部品番号 |
CHX1191-QDG GaAs Monolithic Microwave IC CHX1191-QDG 13.5-40.5GHz Frequency Multiplier GaAs Monolithic Microwave IC Description The CHX1191-QDG is a packaged monolithic time three multiplier which integrates input and output buffer. This c United Monolithic Semiconductors |
文字列「 CHX1191 」「 1191 」で始まる検索結果です。 |
部品説明 |
CHX1191-98F GaAs Monolithic Microwave IC CHX1191-98F 13.5-40.5GHz Frequency Multiplier GaAs Monolithic Microwave IC Description The CHX1191-98F is a monolithic time three multiplier which integrates input and output buffer. The output frequency from 33.7 to 43.5GHz, combined with an output power of 6dBm make of this c United Monolithic Semiconductors |
1N1191 Diode 50V 40A 2-Pin DO-5 New Jersey Semiconductor |
1N1191A Diode 50V 40A 2-Pin DO-5 New Jersey Semiconductor |
2SA1191 Silicon PNP Epitaxial 2SA1190, 2SA1191 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SC2855 and 2SC2856 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1190, 2SA1191 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base volta Hitachi Semiconductor |
2SD1191 PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors Ordering number:925E PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors 2SB881/2SD1191 Driver Applications Applications · Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Features · High DC current gain. · High current capacity and wide Sanyo Semicon Device |
2SD1191 Silicon NPN Darlington Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1191 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 3.5A ·Low Saturation Voltage ·Complement to Type 2SB881 A Inchange Semiconductor |
当社のサイトでは、半導体やセンサーからモーター、電源に至るまで、さまざまな製品のデータシートを簡単に検索してダウンロードできる集中型プラットフォームを提供しています。 |