Datasheet CHK8015-99F Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CHK8015-99F	16W Power Transistor CHK8015-99F 16W Power Transistor GaN HEMT on SiC Description The CHK8015-99F is a 16W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications. The circuit is manufactured with a 0.25µm gate length GaN HEM	United Monolithic Semiconductors

CHK8015- Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CHK8015-99F	16W Power Transistor CHK8015-99F 16W Power Transistor GaN HEMT on SiC Description The CHK8015-99F is a 16W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications. The circuit is manufactured with a 0.25µm	United Monolithic Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
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