CHA3396-QDG データシート PDFこの部品の機能は「27-33.5ghz Medium Power Amplifier」です。 |
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部品番号 |
CHA3396-QDG 27-33.5GHz Medium Power Amplifier CHA3396-QDG 27-33.5GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3396-QDG is a 3 stage monolithic medium power amplifier, which produces 22dB gai United Monolithic Semiconductors |
文字列「 CHA3396 」「 3396 」で始まる検索結果です。 |
部品説明 |
2N3396 Trans GP BJT NPN 25V 3-Pin TO-92 Box New Jersey Semiconductor |
2SC3396 SILICON PNP/NPN EPITAXIAL PLANAR TRANSISTOR Free Datasheet http:/// Free Datasheet http:/// Sanyo |
2SK3396 Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal) 2SK3396 Silicon N-Channel Junction FET Unit: mm For impedance conversion in low frequency For infrared sensor ■ Features • Low gate-source cutoff current IGSS • Small capacitance of short-circuit forward transfer capacitance (common so Panasonic Semiconductor |
HD6433396 Hitachi Single Chip Microcomputer To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. Renesas Technology |
IDT82V3396 Dual Synchronous Ethernet Line Card PLL Dual Synchronous Ethernet Line Card PLL Short Form Datasheet IDT82V3396 FEATURES HIGHLIGHTS • Dual PLL chip: • Provides node clock for ITU-T G.8261/G.8262 Synchronous Ethernet (SyncE) • Exceeds GR-253-CORE (OC-12) and ITU-T G.813 (STM-4) jitter generation requirements � Integrated Device Technology |
K3396 MOSFET ( Transistor ) - 2SK3396 Silicon Junction FETs (Small Signal) 2SK3396 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor ■ Features • Low gate-source cutoff current IGSS • Small capacitance of short-circuit forward transfer capacitance (common source) Ciss Panasonic Semiconductor |
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