CG6263AM データシート PDFこの部品の機能は「2mb (128k X 16) Pseudo StatIC Ram」です。 |
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部品番号 |
CG6263AM 2Mb (128K x 16) Pseudo Static RAM PRELIMINARY CG6263AM 2Mb (128K x 16) Pseudo Static RAM Features • Wide voltage range: 2.70V–3.30V • Access Time: 70ns • Ultra-low active power — Typical active current: 2.0mA @ f = 1 MHz Weida Semiconductor |
文字列「 CG6263 」「 6263AM 」で始まる検索結果です。 |
部品説明 |
1N6263 SMALL SIGNAL SCHOTTKY DIODE ® 1N 6263 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. ABSOLUTE RATINGS (limitin STMicroelectronics |
1N6263 SCHOTTKY BARRIER SWITCHING DIODE 1N6263 SCHOTTKY BARRIER SWITCHING DIODE Features · · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance A B A Mechanical Data · · · · · Case: DO-35, Glass Leads: Solderable per MIL-STD-202, Method Diodes Incorporated |
1N6263 Schottky Diodes 1N5711 and 1N6263 Schottky Diodes DO-204AH (DO-35 Glass) Features • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MO General Semiconductor |
1N6263 SMALL SIGNAL SCHOTTKY DIODE BL GALAXY ELECTRICAL SMALL SIGNAL SCHOTTKY DIODE FEATURES For general purpose applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,bi Galaxy Semi-Conductor Holdings |
1N6263 SCHOTTKY RECTIFIERS 1N5711, 1N5712 & 1N6263 High-reliability discrete products and engineering services since 1977 SCHOTTKY RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS Digitron Semiconductors |
1N6263 SCHOTTKY BARRIER DIODES 1N5711 and 1N6263 VRRM : 70V , 60V FEATURES : • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, b EIC |
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