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Datasheet CEB3120 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | CEB3120 | N-Channel Enhancement Mode Field Effect Transistor CEP3120/CEB3120
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 40A,RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
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CET |
CEB3 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
CEB3070 | N-Channel Enhancement Mode Field Effect Transistor |
CET |
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CEB35P10 | P-Channel Enhancement Mode Field Effect Transistor |
CET |
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CEB3205 | N-Channel Enhancement Mode Field Effect Transistor |
CET |
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Número de pieza | Descripción | Fabricantes | |
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