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Datasheet CEB13N10 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | CEB13N10 | N-Channel Enhancement Mode Field Effect Transistor CEP13N10/CEB13N10
N-Channel Enhancement Mode Field Effect Transistor FEATURES
100V, 12.8A, RDS(ON) = 180mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D
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| 1 | CEB13N10L | N-Channel Enhancement Mode Field Effect Transistor CEP13N10L/CEB13N10L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 12.8A, RDS(ON) = 175mΩ @VGS = 10V. RDS(ON) = 185mΩ @VGS = 5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 |
CET |
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