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C5763 データシート PDF 検索 |
| 番号 | 部品番号 | 部品説明 | メーカ | |
| 1 | C5763 | 2SC5763 Ordering number : ENN6989A 2SC5763 NPN Triple Diffused Planar Silicon Transistor www.Datasheet.jp 2SC5763 Switching Regulator Applications Features • • • • • Package Dimensions unit : mm 2010C [2SC5763] 10.2 3.6 5.1 2.7 6.3 High breakdown voltage. High reliability. High-speed switching. Wide ASO. Adoption of MBIT process. 4.5 1.3 18.0 5.6 1.2 14.0 0.8 1 |
 Sanyo Semicon Device |
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C5 データシート - 検索結果 |
| 部品番号 | 部品説明 | メーカ | |
| C5093 | 2SC5093 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5093 2SC5093 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, high gain. · NF = 1.8dB, |S21e|2 = 9.5dB (f = 2 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collect |
 Toshiba |
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| C5046 | 2SC5046 Ordering number:EN4784 NPN Triple Diffused Planar Silicon Transistor 2SC5046 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High reliability (Adoption of HVP process). · High breakdown voltage (VCBO=1600V). |
Sanyo Semicon Device |
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| C5347 | 2SC5347 Ordering number : EN5512C 2SC5347 SANYO Semiconductors DATA SHEET 2SC5347 NPN Epitaxial Planar Silicon Transistor High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifier Applications Features • High-frequency medium output amplification (VCE=5V, IC=50mA) : |
 Sanyo |
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| C5065 | 2SC5065 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5065 2SC5065 VHF to UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1 dB, |S21e|2 = 12 dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating |
Toshiba |
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