C5686 データシート PDF 検索 |
| 番号 | 部品番号 | 部品説明 | メーカ | |
| 1 | C5686 | 2SC5686 Power Transistors 2SC5686 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) www.Datasheet.jp 3.0±0.3 5˚ ■ Features (2.0) • High breakdown voltage: VCBO ≥ 2 000 V • High-speed switching: tf < 200 ns • Wide safe operation area 26.5±0.5 (23.4) 5˚ (4.0) 2.0±0.2 1.1±0.1 |
 Panasonic |
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C5 Datasheet ( データシート ) - 検索結果 |
| 部品番号 | 部品説明 | メーカ | |
| C5097 | 2SC5097 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5097 2SC5097 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, high gain. · NF = 1.8dB, |S21e|2 = 10dB (f = 2 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collecto |
 Toshiba |
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| C5310 | 2SC5310 www.Datasheet.jp Ordering number:ENN5613 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1973/2SC5310 DC/DC Converter Applications Features · Adoption of FBET, MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switc |
 Sanyo Semicon Device |
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| C5SMF-RJS | 5-mm Oval LED CLD-CT201.006 PRODUCT FAMILY DATA SHEET Cree® Screen Master® 5-mm Oval LED C5SMF-RJS/GJS/BJS C5SMF-RJN/GJN/BJN C5SME-RJS/RJN PRODUCT DESCRIPTION The oval LED is specifically designed for variable-message signs and passenger-information signs.The ovalshaped radiation pattern a |
 CREE |
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| C566C-RFS | 5mm Oval LED Cree® 5mm Oval LED C566C-RFS/GFS/BFS/AFS C566C-RFN/GFN/BFN/AFN This oval LED is specifically designed for variable-message signs and passenger-information signs. The oval-shaped radiation pattern and high luminous intensity ensure that these devices are excellent for wide-fieldo |
CREE |
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| C5128 | 2SC5128 Power Transistors 2SC5128 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm s Features q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Full-pack package wit |
 Panasonic Semiconductor |
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| C5095 | 2SC5095 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5095 2SC5095 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 7.5dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Uni |
Toshiba |
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| C5194 | 2SC5194 DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • L |
 NEC |
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 Realtek |
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 Beken |
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| C1318 | This is a 2SC1318, Vcbo=60V, Silicon NPN epitaxial planer type Transistor, TO-92 Package. |
Panasonic |
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| F1B2CCI | VRRM=200V, Stack Silicon Diffused Diode, TO-220IS Package. |
 KEC |
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| 20N60C2 | 650V, Cool MOS Power Transistor, SPP20N60C2, SPB20N60C2, SPA20N60C2. |
 Infineon |
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