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2SC5545 Silicon NPN Epitaxial VHF / UHF wide band amplifier Features • Excellent inter modulation characteristic • High power gain and low noise figure ; PG=16dB typ. , NF=1.1dB typ. at f=900MHz Outline Note: Marking is “ZS-”. MPAK-4 2 3 1 4 1. Collector 2. Emitter 3.

Silicon Epitaxial Planar Transistor FEATURES z Capable low voltage operation APPLICATIONS Pb Lead-free z Designed for low noise amplifier at VHF UHF and CATV band Production specification 2SC5554 ORDERING INFORMATION Type No. Marking 2SC5554 YH SOT-23 Package Code SOT

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5550 High-Speed Switching Application for Inverter Lighting System 2SC5550 Unit: mm • Suitable for RCC circuit (guaranteed small current hFE) : hFE = 13 (min) (IC = 1 mA) • High speed: tr = 0.5 µs (max), tf = 0.3 µs (

Power Transistors 2SC5505 Silicon NPN epitaxial planar type For power amplification ■ Features • High-speed switching • TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Collector-

HIGH SPEED AMPLIFIER FOR PHOTOMULTIPLIER TUBES C5594 SERIES Gain: 36 dB (Voltage Gain of 63) Frequency Bandwidth: 50 k to 1.5 GHz The C5594 is designed as the most suitable amplifier unit for photomultiplier tubes and a non-inverting type amplifier. This unit has high gain of 36