TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5464 2SC5464 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Collector-base voltage

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5439 Switching Regulator Applications High-Voltage Switching Applications DC-DC Converter Applications Inverter Lighting Applications 2SC5439 Unit: mm • Excellent switching times: tr = 0.2 μs (typ.), tf = 0.15 μs (typ.)

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5458 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications DC-AC Inverter Applications 2SC5458 Unit: mm • Excellent switching times: tr = 0.5 µs (max) tf = 0.3 µs (max) (IC =

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5450 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1600V (Min) ·High Speed Switching ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV hori

2SC5465 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5465 Switching Regulator and High Voltage Switching Applications High Speed DC-DC Converter Applications Industrial Applications Unit: mm • Excellent switching times: tr = 0.7 µs (max) tf = 0.5 µs (max) (IC =

Power Transistors 2SC5418 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm s Features q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe ope