Ordering number:EN5293 NPN Triple Diffused Planar Silicon Transistor 2SC5299 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications www.Datasheet.jp Features · High speed :

Ordering number:EN5293 NPN Triple Diffused Planar Silicon Transistor 2SC5299 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications www.Datasheet.jp Features · High speed :

Power Transistors 2SC5223 Silicon NPN triple diffusion planar type For high-speed switching s Features q High collector to base voltage VCBO q High collector to emitter VCEO s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5232 General Purpose Amplifier Applications Switching and Muting Switch Application 2SC5232 Unit: mm • Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • Large collector current: IC =

Ordering number:EN5035 NPN Epitaxial Planar Silicon Transistor 2SC5228 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=13.5dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. Package Dimension

Ordering number:EN5185 NPN Epitaxial Planar Silicon Transistor 2SC5275 UHF to S Band Low-Noise Amplifier, OSC Applications Features · Low noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=10dB typ (f=1.5GHz). · High cutoff frequency : fT=11G

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5255 2SC5255 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure: NF = 1.5dB (f = 2 GHz) · High gain: Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage

Ordering number:EN5126 NPN Triple Diffused Planar Silicon Transistor 2SC5238 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process)