C503B-ABS データシート PDFこの部品の機能は「5-mm Red And Amber Round Leds」です。 |
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部品番号 |
C503B-ABS 5-mm Red and Amber Round LEDs www.Datasheet.jp Cree® 5-mm Red and Amber Round LEDs C503B-RAS/RAN/AAS/AAN (15 degrees) C503B-RBS/RBN/ABS/ABN (23 degrees) C503B-RCS/RCN/ACS/ACN (30 degrees) Data Sheet These round LED families of CREE |
文字列「 C503 」「 503B 」で始まる検索結果です。 |
部品説明 |
C503 NPN Transistor - 2SC503
Toshiba Semiconductor |
C5030 NPN Transistor - 2SC5030 2SC5030 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5030 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm • • • High DC current gain : hFE (1) = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (min) (VCE = 2 V, IC = 4 A) Low saturation volt Toshiba Semiconductor |
C5032 NPN Transistor - 2SC5032 Power Transistors 2SC5032 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm s Features q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Satisfactory linearity of foward current tr Panasonic |
C5036 NPN Transistor - 2SC5036 Power Transistors 2SC5036, 2SC5036A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching s Features q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Satisfactory linearity of foward current tr Panasonic Semiconductor |
C5036 50A AVALANCHE AUTOMOTIVE CELL DIODE ® WON-TOP ELECTRONICS Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX C5020, C5024, C5036 50A AVALANCHE AUTOMOTIVE CELL DIODE Pb D Anode + C E Mechanical Data B C50 Case: Cell Diode Passivated with S Won-Top Electronics |
C5038 Silicon NPN transistor epitaxial type C5038 Silicon NPN transistor epitaxial type C5038 [ Applications ] High-frequency amplification Oscillation Mixing [ Feature ] High transition frequency fT= 650MHz(min.) Low output capacitance Cob= 0.7pF(typ.) High gain [ Absolute maximum ratings (Ta=25C) ] Characteristic S ETC |
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